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TSG40N120CE Datasheet(PDF) 3 Page - Taiwan Semiconductor Company, Ltd |
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TSG40N120CE Datasheet(HTML) 3 Page - Taiwan Semiconductor Company, Ltd |
3 / 10 page TSG40N120CE N-Channel IGBT with FRD. 3/10 Version: B12 Electrical Specifications of the DIODE (Tc=25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Diode Forward Voltage IF = 40A, TJ=25 oC VFM -- 2.8 -- V TJ=125 oC -- 2.9 -- V Reverse Recovery Time IF = 40A, dl/dt=200A/us TJ=25 oC tfr -- 220 -- ns TJ=125 oC -- 3 10 -- Reverse Recovery Current TJ=25 oC Ifr -- 24 -- A TJ=125 oC -- 36 -- Reverse Recovery Charge TJ=25 oC Qfr -- 2600 -- nC TJ=125 oC -- 5580 -- |
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