DNLS350E_15 datasheet(2/5 Pages) DIODES

Part #	DNLS350E

Description	LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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DNLS350E

Document number: DS31231 Rev. 3 - 2

2 of 5

www.diodes.com

April 2009

DNLS350E

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

OFF CHARACTERISTICS

Collector-Base Cutoff Current

ICBO

⎯

100

nA

VCB = 50V, IE = 0

⎯

50

μA

VCB = 50V, IE = 0, TA = 150°C

Emitter-Base Cutoff Current

IEBO

⎯

100

nA

VEB = 5V, IC = 0

Collector-Base Breakdown Voltage

V(BR)CBO

50

⎯

V

IC = 100μA

Collector-Emitter Breakdown Voltage (Note 5)

V(BR)CEO

50

⎯

V

IC = 10mA

Emitter-Base Breakdown Voltage

V(BR)EBO

5

⎯

V

IE = 100μA

ON CHARACTERISTICS (Note 5)

DC Current Gain

hFE

200

⎯

VCE = 2V, IC = 0.5A

200

⎯

VCE = 2V, IC = 1A

100

⎯

VCE = 2V, IC = 2A

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

90

mV

IC = 0.5A, IB = 50mA

⎯

170

IC = 1A, IB = 50mA

⎯

290

IC = 2A, IB = 200mA

Equivalent On-Resistance

RCE(SAT)

⎯

62

145

m

Ω IE = 2A, IB = 200mA

Base-Emitter Saturation Voltage

VBE(SAT)

⎯

1.2

V

IC = 2A, IB = 200mA

Base-Emitter Turn-on Voltage

VBE(ON)

⎯

1.1

V

VCE = 2V, IC = 1A

SMALL SIGNAL CHARACTERISTICS

Transition Frequency

fT

100

⎯

MHz

VCE = 5V, IC = 100mA,

f = 100MHz

Output Capacitance

Cobo

⎯

30

pF

VCB = 10V, f = 1MHz

Notes:

5. Measured under pulsed conditions. Pulse width = 300

μs. Duty cycle ≤2%.

0

0.4

0.8

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Max Power Dissipation vs. Ambient Temperature

A

1.2

1.6

2.0

0

V

, COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage

I = 2mA

B

I = 4mA

B

I = 6mA

B

I = 8mA

B

I = 10mA

B

0

0.5

1.0

1.5

2.0

2.5

3.0

01

2

3

4

5

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