SP2108 datasheet(4/7 Pages) SAMHOP

Part #	SP2108

Description	Super high dense cell design for low RDS(ON).

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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4 / 7 page

SP2108

Ver 1.0

www.samhop.com.tw

Sep,11,2014

4

VGS, Gate-to-Source Voltage(V)

Figure 7. On-Resistance vs.

Gate-Source Voltage

VSD, Body Diode Forward Voltage(V)

Figure 8. Body Diode Forward Voltage

Variation with Source Current

VDS, Drain-Source Voltage(V)

Figure 11. Maximum Safe Operating Area

2400

2000

1600

1200

800

400

0

24

6

8

10

0

10

1

00 . 4

20

2.0

0.8

1 .2

1.6

125 C

ID=0.6A

75 C

25 C

125 C

0.1

1

10

1

0.1

100u

s

1ms

10m

s

100m

s

DC

100

25 C

75 C

0.01

R

DS

(ON)

Limit

VGS=10V

TA=25 C

Single Pulse

Qg, Total Gate Charge(nC)

Figure 9. Gate Charge

10

8

6

4

2

0

1.4

2.8

0.7

2.1

3.5

4.2

VDS=50V

ID=0.6A

Rg, Gate Resistance(

Ω)

Figure 10. switching characteristics

1

10

100

10

100

1000

60

6

TD(off )

VDS=50V,ID=0.6A

VGS=10V

Tf

TD(on)

Tr

3000

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