CMKD3003DO

SURFACE MOUNT

DUAL, ISOLATED, OPPOSING

LOW LEAKAGE SILICON

SWITCHING DIODES

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMKD3003DO

contains two (2) Isolated Opposing Silicon Switching

Diodes, manufactured by the epitaxial planar process,

epoxy molded in a ULTRAmini™ surface mount

package. These devices are designed for switching

applications requiring extremely low leakage.

MARKING CODE: C303

SOT-363 CASE

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Continuous Reverse Voltage

VR

180

V

Average Rectified Current

IO

200

mA

Continuous Forward Current

IF

600

mA

Peak Repetitive Forward Current

IFRM

700

mA

Peak Forward Surge Current, tp=1.0µs

IFSM

2.0

A

Peak Forward Surge Current, tp=1.0s

IFSM

1.0

A

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

IR

VR=125V

1.0

nA

IR

VR=125V, TA=150°C

3.0

µA

IR

VR=180V

10

nA

IR

VR=180V, TA=150°C

5.0

µA

BVR

IR=5.0µA

200

V

VF

IF=1.0mA

0.62

0.72

V

VF

IF=10mA

0.72

0.83

V

VF

IF=50mA

0.80

0.89

V

VF

IF=100mA

0.83

0.93

V

VF

IF=200mA

0.87

1.10

V

VF

IF=300mA

0.90

1.15

V

CT

VR=0, f=1.0MHz

4.0

pF

R0 (19-September 2011)

www.centra lsemi.com