MMBT918LT1 datasheet(1/2 Pages) LRC

Part #	MMBT918LT1

Description	VHF/UFH Transistor(NPN Silicon)

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Manufacturer	LRC [Leshan Radio Company]

Direct Link	http://www.lrc.cn/

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LESHAN RADIO COMPANY, LTD.

O2–1/2

VHF / UFH Transistor

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V

CEO

15

Vdc

Collector–Base Voltage

V

CBO

30

Vdc

Emitter–Base Voltage

V

EBO

3.0

Vdc

Collector Current — Continuous

I

C

50

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

P

D

225

mW

T

A = 25°C

Derate above 25°C

1.8

mW/°C

Thermal Resistance, Junction to Ambient

Rθ

JA

556

°C/W

Total Device Dissipation

P

D

300

mW

Alumina Substrate, (2) T

A = 25°C

Derate above 25°C

2.4

mW/°C

Thermal Resistance, Junction to Ambient

Rθ

JA

417

°C/W

Junction and Storage Temperature

T

J , Tstg

–55 to +150

°C

DEVICE MARKING

MMBT9181LT1 = M3B

ELECTRICAL CHARACTERISTICS (T

A = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

V

(BR)CEO

15

—

Vdc

(I

C = 3.0 mAdc, I B = 0)

Collector–Base Breakdown Voltage

V

(BR)CBO

30

—

Vdc

(I

C = 1.0 µAdc, I E = 0)

Emitter–Base Breakdown Voltage

V

(BR)EBO

3.0

—

Vdc

(I

E = 10 µAdc, I C = 0)

Collector Cutoff Current

I

CBO

—

50

nAdc

( V

CB = 15 Vdc,

I

E = 0)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

2

EMITTER

3

COLLECTOR

1

BASE

1

3

2

MMBT918LT1

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

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