BCX38A_15 datasheet(1/3 Pages) DIODES

Part #	BCX38A

Description	NPN SILICON PLANAR MEDIUM

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Manufacturer	DIODES [Diodes Incorporated]

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NPN SILICON PLANAR MEDIUM

POWER DARLINGTON TRANSISTORS

ISSUE 1 MARCH 94

FEATURES

* 60 Volt VCEO

* Gain of 10K at IC=0.5 Amp

*Ptot=1 Watt

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

80

V

Collector-Emitter Voltage

VCEO

60

V

Emitter-Base Voltage

VEBO

10

V

Peak Pulse Current

ICM

2A

Continuous Collector Current

IC

800

mA

Power Dissipation at Tamb=25°C

Ptot

1W

Operating and Storage Temperature Range

Tj:Tstg

-55 to +200

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO

80

V

IC=10µA, IE=0

Collector-Emitter

Sustaining Voltage

VCEO(sus) 60

V

IC=10mA, IB=0

Emitter-Base

Breakdown Voltage

V(BR)EBO

10

V

IE=10µA, IC=0

Collector Cut-Off

Current

ICBO

100

nA

VCB=60V, IE=0

Emitter Cut-Off

Current

IEBO

100

nA

VEB=8V, IC=0

Collector-Emitter

Saturation Voltage

VCE(sat)

1.25

V

IC=800mA, IB=8mA*

Base-Emitter

Turn-on Voltage

VBE(on)

1.8

V

IC=800mA, VCE=5V*

Static

Forward

Current

Transfer

Ratio

BCX38A

hFE

500

1000

IC=100mA, VCE=5V*

IC=500mA, VCE=5V*

BCX38B

2000

4000

IC=100mA, VCE=5V*

IC=500mA, VCE=5V*

BCX38C

5000

10000

IC=100mA, VCE=5V*

IC=500mA, VCE=5V*

E-Line

TO92 Compatible

C

B

E

BCX38A/B/C

3-20

BCX38A/B/C

0.0001

50

150

100

Pulse Width (seconds)

10

100

1

0.1

0.01

0.001

0

D=1 (D.C.)

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

0.001

0.01

0.1

1

0.8

0.2

1.0

TYPICAL CHARACTERISTICS

VCE(sat) v IC

IC - Collector Current (Amps)

VBE(sat) v IC

IC - Collector Current (Amps)

VBE(on) v IC

0.4

0.001

0.01

0.1

1

0

1.0

0.8

0.6

0.4

0.2

1.6

1.4

1.2

IC - Collector Current (Amps)

hFE v IC

10

1.0

0.5

2.0

1.5

VCE=5V

IC/IB=100

10

Safe Operating Area

VCE - Collector Voltage (Volts)

11000

10

100

0.01

0.1

1

10

Single Pulse Test at Tamb=25°C

D.C.

1s

100ms

10ms

1.0ms

0.1ms

0.6

0.001

0.01

0.1

1

10

IC/IB=100

1.0

0.5

2.0

1.5

0.001

0.01

0.1

1

10

VCE=5V

-55°C

+25°C

+100°C

+175°C

-55°C

+25°C

+100°C

+175°C

-55°C

+25°C

+100°C

-55°C

+25°C

+100°C

+175°C

Maximum transient thermal impedance

3-21

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