2N2405

SILICON

NPN TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N2405 is a silicon

NPN epitaxial planar transistor designed for small signal

general purpose switching applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C unless otherwise noted)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

120

V

Collector-Emitter Voltage

VCER

140

V

Collector-Emitter Voltage

VCEV

120

V

Collector-Emitter Voltage

VCEO

90

V

Emitter-Base Voltage

VEBO

7.0

V

Continuous Collector Current

IC

1.0

A

Power Dissipation (TC=25°C)

PD

5.0

W

Power Dissipation

PD

1.0

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=90V

10

nA

ICBO

VCB=90V, TC=150°C

10

μA

IEBO

VEB=5.0V

10

nA

BVCBO

IC=100μA

120

V

BVCER

IC=100mA, RBE=10Ω

140

V

BVCER

IC=100mA, RBE=500Ω

120

V

BVCEO

IC=100mA

90

V

BVEBO

IE=100μA

7.0

V

VCE(SAT)

IC=50mA, IB=5.0mA

0.2

V

VCE(SAT)

IC=150mA, IB=15mA

0.5

V

VBE(SAT)

IC=50mA, IB=5.0mA

0.9

V

VBE(SAT)

IC=150mA, IB=15mA

1.1

V

hFE

VCE=10V, IC=100μA

20

hFE

VCE=10V, IC=10mA

35

hFE

VCE=10V, IC=150mA

60

200

fT

VCE=10V, IC=50mA, f=20MHz

120

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

15

pF

Cib

VEB=0.5V, IC=0, f=1.0MHz

85

pF

TO-39 CASE

R0 (2-December 2013)

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