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HFB1N60F Datasheet(PDF) 2 Page - SemiHow Co.,Ltd. |
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HFB1N60F Datasheet(HTML) 2 Page - SemiHow Co.,Ltd. |
2 / 8 page Electrical Characteristics T J=25 C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units I S Continuous Source-Drain Diode Forward Current -- -- 1.0 A I SM Pulsed Source-Drain Diode Forward Current -- -- 4.0 V SD Source-Drain Diode Forward Voltage I S = 1.0 A, VGS = 0 V -- -- 1.3 V trr Reverse Recovery Time I S = 1.0 A, VGS = 0 V di F/dt = 100 A/ (Note 4) -- 181 -- Qrr Reverse Recovery Charge -- 0.5 -- nC On Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0 V, ID = 250 600 -- -- V I DSS Zero Gate Voltage Drain Current V DS = 600 V, VGS = 0 V -- -- 10 V DS = 480 V, TC = 125 -- -- 100 I GSS Gate-Body Leakage Current V GS = 30 V, V DS = 0 V -- -- 100 Off Characteristics C iss Input Capacitance V DS = 25 V, VGS = 0 V, f = 1.0 MHz -- 160 -- C oss Output Capacitance -- 26 -- C rss Reverse Transfer Capacitance -- 6.5 -- Dynamic Characteristics t d(on) Turn-On Time V DS = 300 V, ID = 1.0 A, R G = 25 (Note 4,5) -- 13 -- t r Turn-On Rise Time -- 17 -- t d(off) Turn-Off Delay Time -- 19 -- t f Turn-Off Fall Time -- 22 -- Q g Total Gate Charge V DS = 480 V, ID = 1.0 A, V GS = 10 V (Note 4,5) -- 3.7 -- nC Q gs Gate-Source Charge -- 0.9 -- nC Q gd Gate-Drain Charge -- 1.3 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics V GS Gate Threshold Voltage V DS = VGS, ID = 250 2.0 -- 4.0 V R DS(ON) Static Drain-Source On-Resistance V GS = 10 V, ID = 0.5 A -- 6.5 8 Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=59mH, I AS=1.0A, VDD=50V, RG=25 , Starting T J =25 C 3. I SD DD DSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 5. Essentially Independent of Operating Temperature |
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