CMLT5078E NPN/PNP

CMLT5087E PNP/PNP

CMLT5088E NPN/NPN

ENHANCED SPECIFICATION

SURFACE MOUNT SILICON

DUAL TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLT5078E,

CMLT5087E, and CMLT5088E are surface mount

silicon transistors with enhanced specifications

designed for applications requiring high gain and low

noise.

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

50

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

100

mA

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)

TYP

SYMBOL

TEST CONDITIONS

MIN

NPN

PNP

MAX

UNITS

ICBO

VCB=20V

50

nA

IEBO

VEB=3.0V

50

nA

BVCBO

IC=100μA

50

135

150

V

BVCEO

IC=1.0mA

50

65

105

V

BVEBO

IE=100μA

5.0

8.7

7.5

V

VCE(SAT)

IC=10mA, IB=1.0mA

45

50

100

mV

VCE(SAT)

IC=100mA, IB=10mA

110

225

400

mV

VBE(SAT)

IC=10mA, IB=1.0mA

700

700

800

mV

hFE

VCE=5.0V, IC=0.1mA

300

430

390

900

hFE

VCE=5.0V, IC=1.0mA

300

435

380

hFE

VCE=5.0V, IC=10mA

300

430

350

hFE

VCE=5.0V, IC=100mA

50

125

75

fT

VCE=5.0V, IC=500μA, f=20MHz

100

MHz

Cob

VCB=5.0V, IE=0, f=1.0MHz

4.0

pF

Cib

VBE=0.5V, IC=0, f=1.0MHz

15

pF

hfe

VCE=5.0V, IC=1.0mA, f=1.0kHz

350

1400

NF

VCE=5.0V, IC=100μA, RS=10kΩ,

f=10Hz to 15.7kHz

3.0

dB

MARKING CODES: CMLT5078E: L78

CMLT5087E: L87

CMLT5088E: L88 or 88

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SOT-563 CASE

R6 (29-June 2015)

www.centr a lsemi.com