◎ SEMIHOW REV.A0,December 2014

HRLF125N06K

60V N-Channel Trench MOSFET

December 2014

Absolute Maximum Ratings

T

8DFN 5x6

1

 BV

 I

 Unrivalled Gate Charge : 50 nC (Typ.)

 Lower R

 Lower R

 100% Avalanche Tested

FEATURES

Symbol

Parameter

Value

Units

V

DSS

Drain-Source Voltage

60

V

I

D

Drain Current

– Continuous (T

70 *

A

Drain Current

– Continuous (T

49 *

A

I

DM

Drain Current

– Pulsed

(Note 1)

245 *

A

V

GS

Gate-Source Voltage

±25

V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

145

mJ

E

AR

Repetitive Avalanche Energy

(Note 1)

7.5

mJ

P

D

Power Dissipation (T

75

W

Power Dissipation (T

2.4

W

T

Operating and Storage Temperature Range

-55 to +175

℃

T

L

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

℃

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

Units

Junction-to-Ambient

--

62

℃/W

Junction-to-Case

--

2.0

* Drain current limited by maximum junction temperature