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HRLF125N06K Datasheet(PDF) 1 Page - SemiHow Co.,Ltd. |
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HRLF125N06K Datasheet(HTML) 1 Page - SemiHow Co.,Ltd. |
1 / 7 page ◎ SEMIHOW REV.A0,December 2014 HRLF125N06K 60V N-Channel Trench MOSFET December 2014 Absolute Maximum Ratings T C=25℃ unless otherwise specified 8DFN 5x6 1 BV DSS = 60 V I D = 70 A Unrivalled Gate Charge : 50 nC (Typ.) Lower R DS(ON) : 10 mΩ (Typ.) @VGS=10V Lower R DS(ON) : 12 mΩ (Typ.) @VGS=4.5V 100% Avalanche Tested FEATURES Symbol Parameter Value Units V DSS Drain-Source Voltage 60 V I D Drain Current – Continuous (T C = 25℃) 70 * A Drain Current – Continuous (T C = 100℃) 49 * A I DM Drain Current – Pulsed (Note 1) 245 * A V GS Gate-Source Voltage ±25 V E AS Single Pulsed Avalanche Energy (Note 2) 145 mJ E AR Repetitive Avalanche Energy (Note 1) 7.5 mJ P D Power Dissipation (T C = 25℃) 75 W Power Dissipation (T A = 25℃) 2.4 W T J, TSTG Operating and Storage Temperature Range -55 to +175 ℃ T L Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 ℃ Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units RθJA Junction-to-Ambient -- 62 ℃/W RθJC Junction-to-Case -- 2.0 * Drain current limited by maximum junction temperature |
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