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HRLF125N06K Datasheet(PDF) 2 Page - SemiHow Co.,Ltd. |
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HRLF125N06K Datasheet(HTML) 2 Page - SemiHow Co.,Ltd. |
2 / 7 page ◎ SEMIHOW REV.A0,December 2014 Electrical Characteristics T J=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units I S Continuous Source-Drain Diode Forward Current -- -- 70 A I SM Pulsed Source-Drain Diode Forward Current -- -- 245 V SD Source-Drain Diode Forward Voltage I S = 15 A, VGS = 0 V -- -- 1.3 V trr Reverse Recovery Time I S = 15 A, VGS = 0 V di F/dt = 100 A/μs -- 40 -- ㎱ Qrr Reverse Recovery Charge -- 40 -- nC On Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0 V, ID = 250 ㎂ 60 -- -- V I DSS Zero Gate Voltage Drain Current V DS = 48 V, VGS = 0 V -- -- 1 ㎂ V DS = 48 V, TJ = 125℃ -- -- 100 ㎂ I GSS Gate-Body Leakage Current V GS = ±20 V, VDS = 0 V -- -- ±100 ㎁ Off Characteristics C iss Input Capacitance V DS = 25 V, VGS = 0 V, f = 1.0 MHz -- 2700 -- ㎊ C oss Output Capacitance -- 230 -- ㎊ C rss Reverse Transfer Capacitance -- 180 -- ㎊ R g Gate Resistance V GS = 0 V, VDS = 0 V, f = 1MHz -- 1.2 -- Ω Dynamic Characteristics t d(on) Turn-On Time V DS = 30 V, ID = 15 A, R G = 6 Ω -- 20 -- ㎱ t r Turn-On Rise Time -- 50 -- ㎱ t d(off) Turn-Off Delay Time -- 120 -- ㎱ t f Turn-Off Fall Time -- 40 -- ㎱ Q g Total Gate Charge V DS = 48 V, ID = 15 A, V GS = 10 V -- 50 -- nC Q gs Gate-Source Charge -- 7 -- nC Q gd Gate-Drain Charge -- 13 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, I AS=13A, VDD=25V, RG=25Ω, Starting TJ =25°C V GS Gate Threshold Voltage V DS = VGS, ID = 250 ㎂ 1.0 -- 2.4 V R DS(ON) Static Drain-Source On-Resistance V GS = 10 V, ID = 15 A -- 10 12.5 m Ω V GS = 4.5 V, ID = 10 A -- 12 15 m Ω g FS Forward Transconductance V DS = 15, ID = 15 A -- 60 -- S |
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