HRLP55N03K datasheet(3/8 Pages) SEMIHOW

Part #	HRLP55N03K

Description	Superior Avalanche Rugged Technology

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Manufacturer	SEMIHOW [SemiHow Co.,Ltd.]

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◎ SEMIHOW REV.A0,December 2014

Typical Characteristics

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

0

10

20

30

40

50

60

0

2

4

6

8

10

12

V

DS = 24V

I

D = 20V

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

10

2

V

GS

Top :

10 V

8 V

7 V

6 V

5 V

4 V

Bottom : 3 V

* Notes :

1. 300us Pulse Test

2. T

C = 25

oC

V

DS, Drain-Source Voltage [V]

0

2

4

0.1

1

10

100

25

oC

* Notes :

1. V

DS= 15V

2. 300us Pulse Test

V

GS, Gate-Source Voltage [V]

175

oC

0.0

0.4

0.8

1.2

1.6

2.0

0.1

1

10

100

25

oC

* Notes :

1. V

GS= 0V

2. 300us Pulse Test

V

SD, Source-Drain Voltage [V]

175

oC

0

40

80

120

160

200

240

0

2

4

6

8

10

12

14

16

V

GS = 4.5V

∗ Note : T

J = 25

oC

I

D, Drain Current [A]

V

GS = 10V

10

-1

10

0

10

1

0

500

1000

1500

2000

2500

3000

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

* Note ;

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

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