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LTC4229 Datasheet(PDF) 3 Page - Linear Technology

Part # LTC4229
Description  Ideal Diode and Hot Swap Controller
Download  28 Pages
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Manufacturer  LINER [Linear Technology]
Direct Link  http://www.linear.com
Logo LINER - Linear Technology

LTC4229 Datasheet(HTML) 3 Page - Linear Technology

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LTC4229
3
4229f
For more information www.linear.com/LTC4229
elecTrical characTerisTics The
l
denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VIN = 12V, unless otherwise noted.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Supplies
VIN
Input Supply Range
l
2.9
18
V
IIN
Input Supply Current
l
2
4
mA
VINTVCC
Internal Regulator Voltage
I = 0, –500µA
l
4.5
5
5.5
V
VINTVCC(UVL)
Internal VCC Undervoltage Lockout
INTVCC Rising
l
2.1
2.2
2.3
V
∆VINTVCC(HYST) Internal VCC Undervoltage Lockout Hysteresis
l
30
60
90
mV
Ideal Diode Control
∆VFWD(REG)
Forward Regulation Voltage (VIN – VDSNS)
l
35
50
65
mV
∆VDGATE
External N-Channel Gate Drive
(VDGATE – VDSRC)
IN < 7V, ∆VFWD = 0.15V; I = 0, –1µA
IN = 7V to 18V, ∆VFWD = 0.15V; I = 0, –1µA
l
l
5
10
7
12
14
14
V
V
∆VDGATE(ST)
Diode MOSFET On Detect Threshold
(VDGATE – VDSRC)
DSTAT Pulls Low, ∆VFWD = 75mV
l
0.3
0.7
1.1
V
∆VFWD(FLT)
Open Diode MOSFET Threshold (VIN – VDSNS) DFLT Pulls Low
l
200
250
300
mV
IDSNS
DSNS Pin Current
DSNS = 12V
l
50
150
300
µA
IDSRC
DSRC Pin Current
DSRC = 0V
l
–95
–150
µA
ICPO(UP)
CPO Pull-Up Current
CPO = DSRC = IN = 2.9V
CPO = DSRC = IN = 18V
l
l
–70
–60
–105
–95
–130
–120
µA
µA
IDGATE(FPU)
DGATE Fast Pull-Up Current
∆VFWD = 0.2V, ∆VDGATE = 0V, CPO = 17V
–1.5
A
IDGATE(FPD)
DGATE Fast Pull-Down Current
∆VFWD = –0.2V, ∆VDGATE = 5V
1.5
A
IDGATE(DN)
DGATE Off Pull-Down Current
DOFF = 2V, ∆VDGATE = 2.5V
l
50
100
200
µA
tON(DGATE)
DGATE Turn-On Delay
∆VFWD = 0.2V , CDGATE = 10nF
l
0.25
0.5
µs
tOFF(DGATE)
DGATE Turn-Off Delay
∆VFWD = –0.2V, CDGATE = 10nF
l
0.2
0.5
µs
tPLH(DGATE)
DOFF Low to DGATE High
l
50
100
µs
Hot Swap Control
∆VSENSE(TH)
Current Limit Sense Voltage Threshold
(VSENSE+ – VSENSE–)
FB = 1.23V
FB = 0V
l
l
22.5
6
25
8.3
27.5
10.6
mV
mV
VSENSE+(UVL)
SENSE+ Undervoltage Lockout
SENSE+ Rising
l
1.8
1.9
2
V
∆VSENSE+(HYST) SENSE+ Undervoltage Lockout Hysteresis
l
10
50
90
mV
ISENSE+
SENSE+ Pin Current
SENSE+ = 11V, IN = 12V, OUT = 0V
SENSE+ = 13V, IN = 12V, OUT = 0V
l
l
150
300
2
450
4
µA
mA
ISENSE–
SENSEPin Current
SENSE= 12V
l
10
40
100
µA
∆VHGATE
External N-Channel Gate Drive
(VHGATE – VOUT)
IN < 7V; I = 0, –1µA
IN = 7V to 18V; I = 0, –1µA
l
l
5
10
7
12
14
14
V
V
∆VHGATE(H)
Gate High Threshold (VHGATE – VOUT)
l
3.6
4.2
4.8
V
IHGATE(UP)
External N-Channel Gate Pull-Up Current
Gate Drive On, HGATE = 0V
l
–7
–10
–13
µA
IHGATE(DN)
External N-Channel Gate Pull-Down Current
Gate Drive Off, OUT = 12V,
HGATE = OUT + 5V
l
1
2
4
mA
IHGATE(FPD)
External N-Channel Gate Fast
Pull-Down Current
Fast Turn-Off, OUT = 12V,
HGATE = OUT + 5V
l
100
200
350
mA
tPHL(SENSE)
Sense Voltage (SENSE+ – SENSE)
High to HGATE Low
∆VSENSE = 200mV, CHGATE = 10nF
l
0.5
1
µs
tOFF(HGATE)
OV High to HGATE Low
UV Low to HGATE Low
EN High to HGATE Low
SENSE+ Low to HGATE Low
l
l
l
l
10
10
20
10
20
20
40
20
µs
µs
µs
µs


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