CMXT3906

SURFACE MOUNT

DUAL PNP

SILICON TRANSISTORS

ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

hre

VCE=10V, IC=1.0mA, f=1.0kHz

0.1

10

hfe

VCE=10V, IC=1.0mA, f=1.0kHz

100

400

hoe

VCE=10V, IC=1.0mA, f=1.0kHz

3.0

60

μS

NF

VCE=5.0V, IC=100μA, RS=1.0kΩ,

f=10Hz to 15.7kHz

4.0

dB

td

VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA

35

ns

tr

VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA

35

ns

ts

VCC=3.0V, IC=10mA, IB1=IB2=1.0mA

225

ns

tf

VCC=3.0V, IC=10mA, IB1=IB2=1.0mA

75

ns

LEAD CODE:

1) Emitter Q1

2) Base Q1

3) Collector Q2

4) Emitter Q2

5) Base Q2

6) Collector Q1

MARKING CODE: X2A

SOT-26 CASE - MECHANICAL OUTLINE

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R3 (12-February 2010)