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BD1LB500 Datasheet(PDF) 1 Page - Rohm |
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BD1LB500 Datasheet(HTML) 1 Page - Rohm |
1 / 19 page Datasheet Product configuration: Silicon monolithic integrated circuit ○The product is not designed for radiation resistance. 1/16 TSZ02201-0G3G0BD00040-1-2 © 2015 ROHM Co., Ltd. All rights reserved. 2015.04.01 Rev.006 www.rohm.co.jp TSZ22111・14・001 1ch Low Side Switch IC In-Vehicle 1ch Low Side Switch BD1LB500 Series (BD1LB500EFJ-C BD1LB500FVM-C) Features ■ Built-in overcurrent limiting circuit ■ Built-in thermal shutdown circuit (TSD) ■ Built-in open load detection circuit (at output OFF) ■ Enables direct control from CMOS logic ICs, etc. ■ Low standby current ■ Built-in under voltage lock out circuit ■ Built-in diagnostic output (ST) terminal ■ Low ON resistance RDS(ON)=350mΩ(Typ) (VDD=IN=5V, Ta=25°C, IOUT=0.25A) ■ Built-in overvoltage protection(active clamp) for output circuit ■ Monolithic power IC in which the control unit (CMOS) and power MOS FET are incorporated into one chip ■ 1ch low side switch for driving mechanical relay coil ■ AEC-Q100 Qualified (1) (1) Grade1 Overview BD1LB500 Series is an in-vehicle 1ch low side switch. This switch builds in the overcurrent limiting circuit, thermal shutdown circuit, open load detection circuit and under voltage lock out circuit. It also provides the diagnostic output circuit when an abnormality is detected. Application ■ In-vehicle application (Air conditioners, body devices, meters, etc.) Specifications Operating voltage range 3.5V to 5.5V ON resistance (25°C, Typ.) 350mΩ Overcurrent limitation (Typ.) 1.50A Active clamp energy (25°C) 25mJ Package HTSOP-J8 4.90mm x 6.00mm x 1.00mm MSOP8 2.90mm x 4.00mm x 0.90mm Basic Application Circuit (Recommendation) (2) When the open detection function is required, an external resistance must be added between DRAIN terminal and SOURCE terminal. (3) It is necessary to detect unusual state(ST terminal is low) when VDD terminal is opened. MSOP8 HTSOP-J8 8 1 2 3 4 7 6 5 Logic Under voltage lock out Open load detection Overvoltage protection Over current Limit DRAIN DRAIN IN SOURCE (GND) SOURCE (GND) ST 10k VDD VDD N.C. 0.1µF (2) Rext RL VBAT (3) |
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