HRP40N08K datasheet(3/8 Pages) SEMIHOW

Part #	HRP40N08K

Description	80V N-Channel Trench MOSFET

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◎ SEMIHOW REV.A0,Jan 2015

Typical Characteristics

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

0

40

80

120

160

200

0

2

4

6

8

10

12

V

DS = 64V

I

D = 30V

Q

G, Total Gate Charge [nC]

0

100

200

300

400

2.8

3.0

3.2

3.4

V

GS = 10V

∗ Note : T

J = 25

oC

I

D, Drain Current [A]

10

0

10

1

10

1

10

2

V

GS

Top :

15 V

10 V

8 V

7 V

6 V

5.5 V

5 V

Bottom : 4.5 V

* Notes :

1. 300us Pulse Test

2. T

C = 25

oC

V

DS, Drain-Source Voltage [V]

0

2

4

6

8

10

0.1

1

10

100

25

oC

* Notes :

1. V

DS= 20V

2. 300us Pulse Test

V

GS, Gate-Source Voltage [V]

175

oC

0.0

0.4

0.8

1.2

1.6

2.0

0.1

1

10

100

25

oC

* Notes :

1. V

GS= 0V

2. 300us Pulse Test

V

SD, Source-Drain Voltage [V]

175

oC

10

-1

10

0

10

1

0

2000

4000

6000

8000

10000

12000

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

* Note ;

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

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HRP40N08K Datasheet(PDF) 3 Page - SemiHow Co.,Ltd.

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