◎ SEMIHOW REV.A0,December 2014

BV

R

I

FEATURES

HRS70N06K

60V N-Channel Trench MOSFET

 Originative New Design

 Superior Avalanche Rugged Technology

 Excellent Switching Characteristics

 Unrivalled Gate Charge : 100 nC (Typ.)

 Extended Safe Operating Area

 Lower R

 100% Avalanche Tested

December 2014

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

T

Thermal Resistance Characteristics

Symbol

Parameter

Value

Units

V

DSS

Drain-Source Voltage

60

V

I

D

Drain Current

– Continuous (T

80 *

A

Drain Current

– Continuous (T

56 *

A

I

DM

Drain Current

– Pulsed

(Note 1)

280 *

A

V

GS

Gate-Source Voltage

±25

V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

415

mJ

E

AR

Repetitive Avalanche Energy

(Note 1)

3.3

mJ

P

D

Power Dissipation (T

- Derate above 25℃

33

W

0.4

W/℃

T

Operating and Storage Temperature Range

-55 to +175

℃

T

L

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

℃

Symbol

Parameter

Typ.

Max.

Units

Junction-to-Case

--

4.6

℃/W

Junction-to-Ambient

--

62.5

* Drain current limited by maximum junction temperature

2

1

3

TO-220F