MPSH10

MPSH11

SILICON

NPN RF TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR MPSH10 and

MPSH11 are silicon NPN RF transistors manufactured

by the epitaxial planar process and designed for low

noise UHF/VHF amplifier and high output oscillator

applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCEO

25

V

Emitter-Base Voltage

VEBO

3.0

V

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=25V

100

nA

IEBO

VEB=2.0V

100

nA

BVCBO

IC=100μA

30

V

BVCEO

IC=1.0mA

25

V

BVEBO

IE=10μA

3.0

V

VCE(SAT)

IC=4.0mA, IB=0.4mA

0.50

V

VBE(ON)

VCE=10V, IB=4.0mA

0.95

V

hFE

VCE=10V, IC=4.0mA

60

fT

VCE=10V, IC=4.0mA, f=100MHz

650

MHz

Ccb

VCB=10V, IE=0, f=1.0MHz

0.70

pF

Crb

VCB=10V, IE=0, f=1.0MHz (MPSH10)

0.35

0.65

pF

Crb

VCB=10V, IE=0, f=1.0MHz (MPSH11)

0.60

0.90

pF

rb’Cc

VCB=10V, IC=4.0mA, f=31.8MHz

9.0

ps

TO-92 CASE

R0 (22-May 2013)

www.centr a lsemi.com