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BS870 Datasheet(PDF) 2 Page - Diodes Incorporated |
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BS870 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 5 page BS870 Document number: DS11302 Rev. 18 - 2 2 of 5 www.diodes.com August 2013 © Diodes Incorporated BS870 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Drain-Gate Voltage RGS 1.0M VDGR 60 V Gate-Source Voltage Continuous VGSS 20 V Drain Current (Note 6) Continuous ID 250 mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 6) PD 300 mW Thermal Resistance, Junction to Ambient RJA 417 C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 60 80 V VGS = 0V, ID = 100A Zero Gate Voltage Drain Current IDSS 0.5 µA VDS = 25V, VGS = 0V Gate-Body Leakage IGSS 10 nA VGS = 15V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 1.0 2.0 3.0 V VDS = VGS, ID = 250A Static Drain-Source On-Resistance RDS (ON) 3.5 5.0 VGS = 10V, ID = 0.2A On-State Drain Current ID(ON) 0.5 1.0 A VGS = 10V, VDS = 7.5V Forward Transconductance gFS 80 mS VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS Input Capacitance Ciss 22 50 pF VDS = 10V, VGS = 0V f = 1.0MHz Output Capacitance Coss 11 25 pF Reverse Transfer Capacitance Crss 2.0 5.0 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 2.0 20 ns VES = 10V, RL = 150, VDS = 10V, RD = 100 Turn-Off Delay Time tD(OFF) 5.0 20 ns Notes: 6. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com. 7. Short duration pulse test used to minimize self-heating effect. |
Similar Part No. - BS870_15 |
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Similar Description - BS870_15 |
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