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CMPDM8002A Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CMPDM8002A Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 4 page  CMPDM8002A SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM8002A is a P-Channel enhancement-mode MOSFET manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. MARKING CODE: C802A MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Drain-Source Voltage VDS 50 V Drain-Gate Voltage VDG 50 V Gate-Source Voltage VGS 20 V Continuous Drain Current ID 280 mA Continuous Source Current (Body Diode) IS 280 mA Maximum Pulsed Drain Current IDM 1.5 A Maximum Pulsed Source Current ISM 1.5 A Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS IGSSF, IGSSR VGS=20V, VDS=0 100 nA IDSS VDS=50V, VGS=0 1.0 μA IDSS VDS=50V, VGS=0, TJ=125°C 500 μA ID(ON) VGS=10V, VDS=10V 500 mA BVDSS VGS=0, ID=10μA 50 V VGS(th) VDS=VGS, ID=250μA 1.0 2.5 V VDS(ON) VGS=10V, ID=500mA 1.5 V VDS(ON) VGS=5.0V, ID=50mA 0.15 V VSD VGS=0, IS=115mA 1.3 V rDS(ON) VGS=10V, ID=500mA 2.5 Ω rDS(ON) VGS=10V, ID=500mA, TJ=125°C 4.0 Ω rDS(ON) VGS=5.0V, ID=50mA 3.0 Ω rDS(ON) VGS=5.0V, ID=50mA, TJ=125°C 5.0 Ω gFS VDS =10V, ID=200mA 200 mS FEATURES: • Low rDS(ON) • Low VDS(ON) • Low threshold voltage • Fast switching • Logic level compatibility APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment SOT-23 CASE R2 (6-February 2015) www.centr a lsemi.com |
Similar Part No. - CMPDM8002A_15 |
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Similar Description - CMPDM8002A_15 |
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