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RFFM6404TR13 Datasheet(PDF) 2 Page - RF Micro Devices |
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RFFM6404TR13 Datasheet(HTML) 2 Page - RF Micro Devices |
2 / 8 page RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140721 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 8 RFFM6404 Absolute Maximum Ratings Parameter Rating Unit Voltage 5.25 V Storage Temperature Range -40 to +150 °C Operating Temperature Range -40 to +85 °C Receive RF Input Power (SAW2) +25 dBm Transmit RF Input Power (PA Enabled) +15 dBm Receive RF Input Power (ANT) +33 dBm T/R Port Load VSWR in Transmit Mode 10:1 ESD, HBM 500 V ESD, CDM 1000 V Moisture Sensitivity Level MSL3 Caution! ESD sensitive device. RFMD Green: RoHS status based on EU Directive 2011/65/EU (at time of this document revision), halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Nominal Operating Parameters Parameter Specification Unit Condition Min Typ Max Frequency 430 450 MHz RF Port Impedance 50 Ω Operating Voltage 2.5 4.2 4.5 V VCCTX & VCCRX VAPC (Tx Output Power Control) 0.0 2.7 3.0 V VAPC operates such that the transmitter output power is saturated at a level lower than 1.9V and minimal variation in output power of the device occurs above that level Leakage Current RF:Off, VCCTX=4.2V, VCCRX=4.2V, VAPC=0.0V, EN=0.0V, TR=0.0V, BYP=0.0V, Temperature=25ºC Total FEM Leakage Current 0.1 1.0 µA ICCTX + ICCRX Transmit High Power Mode Measured Path: TX to ANT, VCCTX=4.2V, VCCRX=4.2V, VAPC=2.7V, EN=1.8V, TR=1.8V, BYP=0.2V, Temperature=25ºC Gain 25.5 26.5 dB VCCTX=4.2V, PIN=+3dBm 21.5 22.5 dB VCCTX=2.7V, PIN=+3dBm Output Power 29.5 dBm VCCTX=4.2V, PIN=+3dBm 27.5 dBm VCCTX=3.6V, PIN=+3dBm 24.5 25.5 dBm VCCTX=2.7V, PIN=+3dBm Output Power Variation -0.4 -0.4 dB VCCTX=4.2V, PIN=+3dBm, Over frequency and control voltage Output P3dB 29 dBm VCCTX=4.2V Operating Current 350 mA VCCTX=4.2V, POUT=27.5dBm, ICCTX 450 600 mA VCCTX=4.2V, PIN =+3dBm, ICCTX Quiescent Current 100 mA ICCTX, RF = Off Second Harmonic -30 dBc POUT=27.5dBm -50 dBc POUT=27.5dBm, with harmonic filter Third – Fourth Harmonic -40 dBc POUT=27.5dBm -60 dBc POUT=27.5dBm, with harmonic filter Fifth – Tenth Harmonic -60 dBc POUT=27.5dBm -60 dBc POUT=27.5dBm, with harmonic filter Module PAE 45 % VCCTX=4.2V, POUT=29.5dBm (takes into account filter and switches) |
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