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ZVP2110G Datasheet(PDF) 2 Page - Diodes Incorporated |
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ZVP2110G Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 5 page ZVP2110G Datasheet Number: DS33395 Rev. 3 - 2 2 of 5 www.diodes.com March 2015 © Diodes Incorporated ZVP2110G Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -310 mA Pulsed Drain Current IDM -3 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation at TA = +25°C Ptot 2 W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -100 — — V ID = -1mA, VGS = 0V Zero Gate Voltage Drain Current IDSS — — -1 -100 µ A VDS = -100V, VGS = 0V VDS = -80V, VGS = 0V , T = +125°C (Notes 6) Gate-Body Leakage IGSS — — -20 nA VGS = ±20V, VDS = 0V Gate-Source Threshold Voltage VGS(th) -1.5 — -3.5 V ID = -1mA, VDS = VGS ON CHARACTERISTICS On-State Drain Current (Note 5) ID(on) -750 — — mA VDS = -25V, VGS = -10V Static Drain-Source On-State Resistance (Note 5) RDS (ON) — — 8 VGS = -10V, ID = -375mA Forward Transconductance (Notes 5 & 6) gfs 125 — — mS VDS = -25V, ID = -375mA DYNAMIC CHARACTERISTICS Input Capacitance (Note 6) Ciss — — 100 pF VDS = -25 V, VGS = 0V f = 1MHz Output Capacitance (Note 6) Coss — — 35 pF Reverse Transfer Capacitance (Note 6) Crss — — 10 pF Turn-On Delay Time (Notes 6 & 7) td(on) — — 7 ns VDD ≈ -25V, ID = -375mA Turn-On Rise Time (Notes 6 & 7) tr — — 15 ns Turn-Off Delay Time (Notes 6 & 7) td(off) — — 12 Ns Turn-Off Fall Time (Notes 6 & 7) tf — — 15 Ns Notes: 5. Measured under pulsed conditions. Width = 300µs. Duty cycle ≤ 2%. 6. Sample Test. 7. Switching times measured with 50 source impedance and <5ns rise time on a pulse generator. |
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