ZVP2110G

Datasheet Number: DS33395 Rev. 3 - 2

2 of 5

www.diodes.com

March 2015

© Diodes Incorporated

ZVP2110G

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

-100

V

Gate-Source Voltage

±20

V

Continuous Drain Current

-310

mA

Pulsed Drain Current

-3

A

Characteristic

Symbol

Value

Unit

2

W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-100

—

—

V

Zero Gate Voltage Drain Current

—

—

-1

-100

µ

A

(Notes 6)

Gate-Body Leakage

—

—

-20

nA

Gate-Source Threshold Voltage

-1.5

—

-3.5

V

ON CHARACTERISTICS

On-State Drain Current (Note 5)

-750

—

—

mA

Static Drain-Source On-State Resistance (Note 5)

—

—

8

Forward Transconductance (Notes 5 & 6)

125

—

—

mS

DYNAMIC CHARACTERISTICS

Input Capacitance (Note 6)

—

—

100

pF

f = 1MHz

Output Capacitance (Note 6)

—

—

35

pF

Reverse Transfer Capacitance (Note 6)

—

—

10

pF

Turn-On Delay Time (Notes 6 & 7)

—

—

7

ns

Turn-On Rise Time (Notes 6 & 7)

—

—

15

ns

Turn-Off Delay Time (Notes 6 & 7)

—

—

12

Ns

Turn-Off Fall Time (Notes 6 & 7)

—

—

15

Ns

Notes:

5. Measured under pulsed conditions. Width = 300µs. Duty cycle ≤ 2%.

6. Sample Test.

7. Switching times measured with 50

source impedance and <5ns rise time on a pulse generator.