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IRF1405SPBF Datasheet(PDF) 2 Page - International Rectifier

Part # IRF1405SPBF
Description  Advanced Process Technology
Download  11 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF1405SPBF Datasheet(HTML) 2 Page - International Rectifier

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IRF1405S/LPbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.057 –––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
4.6
5.3
m
VGS = 10V, ID = 101A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = 10V, ID = 250µA
gfs
Forward Transconductance
69
–––
–––
S
VDS = 25V, ID = 110A
–––
–––
20
µA
VDS = 55V, VGS = 0V
–––
–––
250
VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
200
VGS = 20V
Gate-to-Source Reverse Leakage
–––
––– -200
nA
VGS = -20V
Qg
Total Gate Charge
–––
170
260
ID = 101A
Qgs
Gate-to-Source Charge
–––
44
66
nC
VDS = 44V
Qgd
Gate-to-Drain ("Miller") Charge
–––
62
93
VGS = 10V
„
td(on)
Turn-On Delay Time
–––
13
–––
VDD = 38V
tr
Rise Time
–––
190
–––
ID = 110A
td(off)
Turn-Off Delay Time
–––
130
–––
RG = 1.1
tf
Fall Time
–––
110
–––
VGS = 10V
„
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
––– 5480 –––
VGS = 0V
Coss
Output Capacitance
––– 1210 –––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
280
–––
ƒ = 1.0MHz, See Fig. 5
Coss
Output Capacitance
––– 5210 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
900
–––
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
…
––– 1500 –––
VGS = 0V, VDS = 0V to 44V
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 101A, VGS = 0V
„
trr
Reverse Recovery Time
–––
88
130
ns
TJ = 25°C, IF = 101A
Qrr
Reverse RecoveryCharge
–––
250 380
nC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
131
†
680
A


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