IS61LV256AL_09 datasheet(3/12 Pages) ISSI

Part #	IS61LV256AL

Description	32K x 8 LOW VOLTAGE CMOS STATIC RAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

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Integrated Silicon Solution, Inc. — 1-800-379-47743

Rev. C

07/29/09

IS61LV256AL

DC ELECTRICAL CHARACTERISTICS (OverOperatingRange)

Symbol Parameter

Test Conditions

Min.

Max.

Unit

Voh

OutputHIGHVoltage

Vdd = Min.,Ioh = –2.0mA

2.4

—

V

Vol

OutputLOWVoltage

Vdd = Min.,Iol = 4.0mA

—

0.4

V

VIh

InputHIGHVoltage

2.2

Vdd + 0.3

V

VIl

InputLOWVoltage(1)

–0.3

0.8

V

IlI

InputLeakage

GND≤ VIn ≤ Vdd

Com.

–1

1

µA

Ind.

–2

2

Ilo

OutputLeakage

GND≤ Vout ≤ Vdd, OutputsDisabled

Com.

–1

1

µA

Ind.

–2

2

Notes:

1. VIl (min.) = –0.3V(DC);VIl (min.)=–2.0V(pulsewidth≤ 2.0 ns).

VIh (max.) = Vdd + 0.5V(DC);VIh (max.)=Vdd+2.0V(pulsewidth≤ 2.0 ns).

2. Notmorethanoneoutputshouldbeshortedatonetime.Durationoftheshortcircuitshouldnotexceed30seconds.

OPERATING RANGE

Range

Ambient Temperature

Speed (ns)

VDD(1)

Commercial

0°Cto+70°C

10

3.3V,+10%,–5%

Industrial

–40°Cto+85°C

10

3.3V+10%,–5%

Note: 1.Ifoperatedat12ns,Vddrangeis3.3V+10%.

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IS61LV256AL Datasheet(PDF) 3 Page - Integrated Silicon Solution, Inc

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