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IRF5802PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF5802PBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  www.irf.com 1 IRF5802PbF SMPS MOSFET HEXFET® Power MOSFET l High frequency DC-DC converters Benefits Applications l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l Lead-Free l Halogen-Free Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 0.9 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 0.7 A IDM Pulsed Drain Current 7.0 PD @TA = 25°C Power Dissipation 2.0 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 7.1 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Notes through are on page 8 VDSS RDS(on) max ID 150V 1.2 W@VGS = 10V 0.9A TSOP-6 " ! B 9 9 T 9 # $ % 9 Parameter Max. Units RθJA Maximum Junction-to-Ambient 62.5 °C/W Thermal Resistance 04/20/10 PD- 95475B |
Similar Part No. - IRF5802PBF_15 |
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Similar Description - IRF5802PBF_15 |
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