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RFHA1043 Datasheet(PDF) 2 Page - RF Micro Devices |
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RFHA1043 Datasheet(HTML) 2 Page - RF Micro Devices |
2 / 11 page RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131023 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 11 RFHA1043 Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD) 150 V Gate Voltage (VG) -8 to 2 V Gate Current (ID) 105 mA Ruggedness (VSWR) 10:1 Storage Temperature Range -55 to +125 °C Operating Temperature Range (TL) -40 to +85 °C Operating Junction Temperature (TJ) 250 °C Human Body Model Class 1A MTTF (TJ < 200°C, 95% Confidence Limits)* 1.8E + 07 Hours MTTF (TJ < 250°C, 95% Confidence Limits)* 1.1E + 05 Hours Thermal Resistance, Rth (junction to case) measured at TC = 85°C, DC bias only 1.4 °C/W Thermal Resistance, Rth (junction to case) measured at TC = 85°C, CW 1.27 °C/W Caution! ESD sensitive device. RFMD Green: RoHS compliant per EU Directive 2011/65/EU, halogen free per IEC 61249-2-21, <1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony solder. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. * MTTF – median time to failure for wear-out failure mode (30% I DSS degradation) which is determined by the technology process reliability. Refer to product qualification report for FIT (random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table above. Bias Conditions should also satisfy the following expression: PDISS < (TJ – TC) / RTH J-C and TC = TCASE Nominal Operating Parameters Parameter Specification Unit Condition Min Typ Max Recommended Operating Conditions Drain Voltage (VDSQ) 48 V Gate Voltage (VGSQ) -4.5 -3.2 -2.5 V Drain Bias Current 600 mA Frequency of Operation 1.2 1.85 GHz DC Functional Test IG(OFF) – Gate Leakage 2 mA VG = -8V, VD = 0V ID(OFF) – Drain Leakage 2.5 mA VG = -8V, VD = 48V VGS(TH) – Threshold Voltage -3.5 V VD = 48V, ID = 28mA VDS(ON) – Drain Voltage at High Current 0.215 V VG = 0V, ID = 1.5A |
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