IRF6717MPbF

www.irf.com

7

Fig 18.

Diode Reverse Recovery Test Circuit for N-Channel

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

Driver Gate Drive

Inductor Curent

D =

P.W.

Period

*

Inductor Current

Circuit Layout Considerations

 Low Stray Inductance

Ground Plane

Low Leakage Inductance

Current Transformer

Driver same type as D.U.T.

D.U.T. - Device Under Test

+

-

+

+

+

-

-

-

ƒ

„

‚

D.U.T



DirectFET™ Board Footprint, MX Outline

(Medium Size Can, X-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.

This includes all recommendations for stencil and substrate designs.

G = GATE

D = DRAIN

S = SOURCE

D

D

D

D

G

S

S