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P4C1041L Datasheet(HTML) 4 Page - Pyramid Semiconductor Corporation

Part No. P4C1041L
Description  LOW POWER 256K x 16 (4 MEG) STATIC CMOS RAM
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Maker  PYRAMID [Pyramid Semiconductor Corporation]
Homepage  http://www.pyramidsemiconductor.com
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P4C1041L Datasheet(HTML) 4 Page - Pyramid Semiconductor Corporation

 
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P4C1041L - LOW POWER 256K X 16 STATIC CMOS RAM
Page 4
Document # SRAM142 REV OR
TIMIng WAVEFORM OF READ CYCLE nO. 1
TIMIng WAVEFORM OF READ CYCLE nO. 2 (OE COnTROLLED)(5,6)
notes:
1. Stresses greater than those listed under MAxIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAxIMUM rating conditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with V
IL and IIL not more negative than –2.0V and
–100mA, respectively, are permissible for pulse widths up to 20ns.
4. This parameter is sampled and not 100% tested.
5. WE is HIGH for READ cycle.
6. CE is LOW and OE is LOW for READ cycle.
7. ADDRESS must be valid prior to, or coincident with CE transition
LOW.
8. Transition is measured ± 200 mV from steady state voltage prior to
change,withloadingasspecifiedinFigure1. Thisparameterissampled
and not 100% tested.
9. Read Cycle Time is measured from the last valid address to the first
transitioning address.


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