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P4C1041L Datasheet(HTML) 2 Page - Pyramid Semiconductor Corporation

Part No. P4C1041L
Description  LOW POWER 256K x 16 (4 MEG) STATIC CMOS RAM
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Maker  PYRAMID [Pyramid Semiconductor Corporation]
Homepage  http://www.pyramidsemiconductor.com
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P4C1041L Datasheet(HTML) 2 Page - Pyramid Semiconductor Corporation

 
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P4C1041L - LOW POWER 256K X 16 STATIC CMOS RAM
Page 2
Document # SRAM142 REV OR
DC ELECTRICAL CHARACTERISTICS
(Over Recommended Operating Temperature & Supply Voltage)(2)
Sym Parameter
Value
Unit
V
CC
Power Supply Pin with
Respect to GND
-0.5 to +7.0
V
V
TERM
Terminal Voltage with
Respect to GND
-0.5 to V
CC + 0.5
V
T
A
Operating Temperature
-40 to +85
°C
T
BIAS
Temperature Under Bias
-40 to +85
°C
T
STG
Storage Temperature
-65 to +150
°C
I
OUT
DC Output Current
20
mA
MAxIMUM RATIngS(1)
RECOMMEnDED OPERATIng COnDITIOnS
grade(2)
Ambient Temp
gnD
V
CC
Commercial
0°C to 70°C
0V
5.0V ± 10%
Industrial
-40°C to +85°C
0V
5.0V ± 10%
CAPACITAnCES(4)
(V
CC = 5.0V, TA = 25°C, f = 1.0MHz)
Sym
Parameter
Conditions Typ Unit
C
IN
Input Capacitance
V
IN=0V
6
pF
C
OUT
Output Capacitance
V
OUT=0V
8
pF
Sym Parameter
Test Conditions
Min
Max
Unit
V
IH
Input High Voltage
2.4
V
CC + 0.3
V
V
IL
Input Low Voltage
-0.2
0.6
V
V
OL
Output Low Voltage (TTL Load)
I
OL = +2 mA, VCC = Min
0.4
V
V
OH
Output High Voltage (TTL Load)
I
OH = -1 mA, VCC = Min
2.4
V
I
LI
Input Leakage Current
V
CC = Max, VIN = GND to VCC
-1
+1
µA
I
LO
Output Leakage Current
V
CC = Max,
CE = V
IH,
V
OUT = GND to VCC
-1
+1
µA
I
SB1
Standby Power Supply Current (CMOS
Input Levels)
CE ≥ V
CC - 0.2V,
V
CC = Max,
f = 0, Outputs Open,
V
IN ≥ VCC - 0.2V or
V
IN ≤ 0.2V
50
µA
I
CC
Dynamic Operating Current
Cycle Time = Min,
CE = V
IL,
I
I/O = 0 mA,
Other pins at V
IH or VIL
60
mA
I
CC1
Dynamic Operating Current (CMOS)
Cycle Time = 1 µs,
CE ≤ 0.2V,
I
I/O = 0 mA,
Other pins at 0.2V or V
CC - 0.2V
10
mA


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