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2SC6017-TL-E Datasheet(PDF) 2 Page - ON Semiconductor

Part # 2SC6017-TL-E
Description  Bipolar Transistor (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2SC6017-TL-E Datasheet(HTML) 2 Page - ON Semiconductor

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2SA2169 / 2SC6017
No.8275-2/10
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
Base Current
IB
(--)2
A
Collector Dissipation
PC
0.95
W
Tc=25°C20
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0A
(--)10
μA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)10
μA
DC Current Gain
hFE
VCE=(--)2V, IC=(--)1A
200
(560)700
Gain-Bandwidth Product
fT
VCE=(--)5V, IC=(--)1A
(130)200
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(90)60
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)5A, IB=(--)250mA
(--290)180
(--580)360
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(--)5A, IB=(--)250mA
(--)0.93
(--)1.4
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)100μA, IE=0A
(--50)100
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)100μA, IC=0A
(--)6
V
Turn-On Time
ton
See specified Test Circuit.
(70)40
ns
Storage Time
tstg
(650)1000
ns
Fall Time
tf
(60)80
ns
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
2SA2169-E
TP
500pcs./bag
Pb Free
2SC6017-E
TP
500pcs./bag
2SA2169-TL-E
TP-FA
700pcs./reel
2SC6017-TL-E
TP-FA
700pcs./reel
VR
RB
VCC=20V
VBE= --5V
+
+
50
Ω
INPUT
OUTPUT
RL
100
μF
470
μF
PW=20
μs
IB1
D.C.
≤1%
IB2
IC=20IB1= --20IB2=3A
For PNP, the polarity is reversed.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.


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