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IRFR9120NPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFR9120NPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRFR/U9120NPbF Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage -1.6 V TJ = 25°C, IS = -3.9A, VGS = 0V trr Reverse Recovery Time 100 150 ns TJ = 25°C, IF = -4.0A Qrr Reverse Recovery Charge 420 630 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) -6.6 -26 A Notes: ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994
This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact Starting TJ = 25°C, L = 13mH RG = 25Ω, IAS = -3.9A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ -4.0A, di/dt ≤ 300A/µs, V DD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. S D G Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -100 V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient -0.11 V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance 0.48 Ω VGS = -10V, ID = -3.9A VGS(th) Gate Threshold Voltage -2.0 -4.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 1.4 S VDS = -50V, ID = -4.0A -25 µA VDS = -100V, VGS = 0V -250 VDS = -80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage 100 VGS = 20V Gate-to-Source Reverse Leakage -100 nA VGS = -20V Qg Total Gate Charge 27 ID = -4.0A Qgs Gate-to-Source Charge 5.0 nC VDS = -80V Qgd Gate-to-Drain ("Miller") Charge 15 VGS = -10V, See Fig. 6 and 13 td(on) Turn-On Delay Time 14 VDD = -50V tr Rise Time 47 ID = -4.0A td(off) Turn-Off Delay Time 28 RG = 12 Ω tf Fall Time 31 RD =12 Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact
Ciss Input Capacitance 350 VGS = 0V Coss Output Capacitance 110 pF VDS = -25V Crss Reverse Transfer Capacitance 70 = 1.0MHz, See Fig. 5 nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current S D G Uses IRF9520N data and test conditions. |
Similar Part No. - IRFR9120NPBF_15 |
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Similar Description - IRFR9120NPBF_15 |
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