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IRFS3607PBF Datasheet(PDF) 2 Page - International Rectifier

Part # IRFS3607PBF
Description  High Efficiency Synchronous Rectification in SMPS
Download  11 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFS3607PBF Datasheet(HTML) 2 Page - International Rectifier

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IRFB/S/SL3607PbF
2
www.irf.com
S
D
G
„ ISD  46A, di/dt  1920A/μs, VDD V(BR)DSS, TJ  175°C.
… Pulse width  400μs; duty cycle  2%.
† Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-
mended footprint and soldering techniques refer to application note #AN-994.
‰ Ris measured at TJ approximately 90°C.
Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Note that current limitations arising from heating of the
device leads may occur with some lead mounting arrangements.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.12mH
RG = 25, IAS = 46A, VGS =10V. Part not recommended for use
above this value.
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
75
–––
–––
V
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
––– 0.096 –––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
7.34
9.0
m
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
IDSS
Drain-to-Source Leakage Current
–––
–––
20
μA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
115
–––
–––
S
Qg
Total Gate Charge
–––
56
84
nC
Qgs
Gate-to-Source Charge
–––
13
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
16
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
40
–––
RG(int)
Internal Gate Resistance
–––
0.55
–––
td(on)
Turn-On Delay Time
–––
16
–––
ns
tr
Rise Time
–––
110
–––
td(off)
Turn-Off Delay Time
–––
43
–––
tf
Fall Time
–––
96
–––
Ciss
Input Capacitance
–––
3070 –––
pF
Coss
Output Capacitance
–––
280
–––
Crss
Reverse Transfer Capacitance
–––
130
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related)j –––
380
–––
Coss eff. (TR) Effective Output Capacitance (Time Related)h
–––
610
–––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
80
™
A
(Body Diode)
ISM
Pulsed Source Current
–––
–––
310
(Body Diode)
Ãd
VSD
Diode Forward Voltage
–––
–––
1.3
V
dv/dt
Peak Diode Recovery
–––
27
–––
V/ns
trr
Reverse Recovery Time
–––
33
50
ns
TJ = 25°C
VR = 64V,
–––
39
59
TJ = 125°C
IF = 46A
Qrr
Reverse Recovery Charge
–––
32
48
nC TJ = 25°C
di/dt = 100A/μs
g
–––
47
71
TJ = 125°C
IRRM
Reverse Recovery Current
–––
1.9
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
MOSFET symbol
RG = 6.8
VGS = 10V g
VDD = 49V
ID = 46A, VDS =0V, VGS = 10V
ID = 46A
Conditions
VDS = 50V, ID = 46A
ID = 46A
VGS = 20V
VGS = -20V
VDS = 60V, VGS = 0V, TJ = 125°C
showing the
VDS = 38V
Conditions
VGS = 10V g
VGS = 0V
VDS = 50V
ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V j
VGS = 0V, VDS = 0V to 60V h
TJ = 175°C, IS = 46A, VDS = 75V f
TJ = 25°C, IS = 46A, VGS = 0V g
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 5mAd
VGS = 10V, ID = 46A g
VDS = VGS, ID = 100μA
VDS = 75V, VGS = 0V


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