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IRFS3607PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFS3607PBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 11 page IRFB/S/SL3607PbF 2 www.irf.com S D G ISD 46A, di/dt 1920A/μs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400μs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recom- mended footprint and soldering techniques refer to application note #AN-994. Ris measured at TJ approximately 90°C. Notes: Calculated continuous current based on maximum allowable junction temperature. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.12mH RG = 25, IAS = 46A, VGS =10V. Part not recommended for use above this value. Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.096 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 7.34 9.0 m VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V IDSS Drain-to-Source Leakage Current ––– ––– 20 μA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 115 ––– ––– S Qg Total Gate Charge ––– 56 84 nC Qgs Gate-to-Source Charge ––– 13 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 16 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 40 ––– RG(int) Internal Gate Resistance ––– 0.55 ––– td(on) Turn-On Delay Time ––– 16 ––– ns tr Rise Time ––– 110 ––– td(off) Turn-Off Delay Time ––– 43 ––– tf Fall Time ––– 96 ––– Ciss Input Capacitance ––– 3070 ––– pF Coss Output Capacitance ––– 280 ––– Crss Reverse Transfer Capacitance ––– 130 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related)j ––– 380 ––– Coss eff. (TR) Effective Output Capacitance (Time Related)h ––– 610 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 80 A (Body Diode) ISM Pulsed Source Current ––– ––– 310 (Body Diode) Ãd VSD Diode Forward Voltage ––– ––– 1.3 V dv/dt Peak Diode Recovery ––– 27 ––– V/ns trr Reverse Recovery Time ––– 33 50 ns TJ = 25°C VR = 64V, ––– 39 59 TJ = 125°C IF = 46A Qrr Reverse Recovery Charge ––– 32 48 nC TJ = 25°C di/dt = 100A/μs g ––– 47 71 TJ = 125°C IRRM Reverse Recovery Current ––– 1.9 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) MOSFET symbol RG = 6.8 VGS = 10V g VDD = 49V ID = 46A, VDS =0V, VGS = 10V ID = 46A Conditions VDS = 50V, ID = 46A ID = 46A VGS = 20V VGS = -20V VDS = 60V, VGS = 0V, TJ = 125°C showing the VDS = 38V Conditions VGS = 10V g VGS = 0V VDS = 50V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 60V j VGS = 0V, VDS = 0V to 60V h TJ = 175°C, IS = 46A, VDS = 75V f TJ = 25°C, IS = 46A, VGS = 0V g integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 5mAd VGS = 10V, ID = 46A g VDS = VGS, ID = 100μA VDS = 75V, VGS = 0V |
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