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IRFS7430PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFS7430PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 12 page  IRFS/SL7430PbF www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 2 Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.15mH RG = 50 Ω, IAS = 100A, VGS =10V. ISD ≤ 100A, di/dt ≤ 990A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. Rθ is measured at TJ approximately 90°C.. Limited by TJmax starting TJ = 25°C, L= 1mH, RG = 50Ω, IAS = 54A, VGS =10V. When mounted on 1" square PCB (FR-4 or G-10 Material). For recom- mended footprint and soldering techniques refer to application note #AN-994. http://www.irf.com/technical-info/appnotes/an-994.pdf Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e mJ EAS (Thermally limited) Single Pulse Avalanche Energy k IAR Avalanche Current Ãd A EAR Repetitive Avalanche Energy d mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case j ––– 0.40 RθJA Junction-to-Ambient (PCB Mount, steady-state) l ––– 40 °C/W A °C 300 760 See Fig. 15, 16, 22a, 22b 375 Max. 426 301 1524 195 1452 -55 to + 175 ± 20 2.5 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.014 ––– V/°C ––– 0.97 1.2 m Ω ––– 1.2 ––– VGS = 6.0V, ID = 50A g VGS(th) Gate Threshold Voltage 2.2 ––– 3.9 V IDSS Drain-to-Source Leakage Current ––– ––– 1.0 μA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 2.1 ––– Ω RDS(on) VGS = 10V, ID = 100A g Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1.0mA VDS = VGS, ID = 250μA Static Drain-to-Source On-Resistance VGS = 20V VGS = -20V VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C |
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