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PEMB11_PUMB11 Datasheet(PDF) 4 Page - NXP Semiconductors |
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PEMB11_PUMB11 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 14 page PEMB11_PUMB11 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 — 30 November 2011 4 of 14 NXP Semiconductors PEMB11; PUMB11 PNP/PNP resistor-equipped transistors; R1 = 10 k , R2 = 10 k 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. FR4 PCB, standard footprint Fig 1. Per device: Power derating curve for SOT363 (SC-88) and SOT666 Tamb (°C) -75 175 125 25 75 -25 006aac749 200 100 300 400 Ptot (mW) 0 Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor Rth(j-a) thermal resistance from junction to ambient in free air [1] PEMB11 (SOT666) [2] --625 K/W PUMB11 (SOT363) - - 625 K/W Per device Rth(j-a) thermal resistance from junction to ambient in free air [1] PEMB11 (SOT666) [2] --417 K/W PUMB11 (SOT363) - - 417 K/W |
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