PEMD24_PUMD24_15 datasheet(4/10 Pages) PHILIPS

Part #	PEMD24_PUMD24

Description	NPN/PNP resistor-equipped transistors R1 = 100 kW, R2 = 100 kW

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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4 / 10 page

9397 750 14457

Product data sheet

Rev. 01 — 2 May 2005

4 of 10

Philips Semiconductors

PEMD24; PUMD24

NPN/PNP resistor-equipped transistors; R1 = 100 k

Ω, R2 = 100 kΩ

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Reﬂow soldering is the only recommended soldering method.

7.

Characteristics

Table 7:

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

Rth(j-a)

thermal resistance from

junction to ambient

in free air

SOT363

[1] -

-

625

K/W

SOT666

[1] [2] -

-

625

K/W

Per device

Rth(j-a)

thermal resistance from

junction to ambient

in free air

SOT363

[1] -

-

416

K/W

SOT666

[1] [2] -

-

416

K/W

Table 8:

Characteristics

Tamb = 25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor; for the PNP transistor with negative polarity

ICBO

collector-base cut-off

current

VCB =50V; IE = 0 A

-

100

nA

ICEO

collector-emitter

cut-off current

VCE =30V; IB =0A

-

1

µA

VCE =30V; IB =0A;

Tj = 150 °C

--

50

µA

IEBO

emitter-base cut-off

current

VEB =5V; IC =0A

-

50

µA

hFE

DC current gain

VCE =5V; IC =5mA

80

-

VCEsat

collector-emitter

saturation voltage

IC = 5 mA; IB = 0.25 mA

-

150

mV

VI(off)

off-state input voltage VCE =5V; IC = 100 µA

-

1.1

0.5

V

VI(on)

on-state input voltage VCE = 0.3 V; IC = 1 mA

3

1.5

-

V

R1

bias resistor 1 (input)

70

100

130

k

Ω

R2/R1

bias resistor ratio

0.8

1

1.2

Cc

collector capacitance

VCB =10V; IE =ie =0A;

f = 1 MHz

TR1 (NPN)

-

2.5

pF

TR2 (PNP)

-

3

pF

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