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PEMD24_PUMD24 Datasheet(PDF) 4 Page - NXP Semiconductors |
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PEMD24_PUMD24 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 10 page 9397 750 14457 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 2 May 2005 4 of 10 Philips Semiconductors PEMD24; PUMD24 NPN/PNP resistor-equipped transistors; R1 = 100 k Ω, R2 = 100 kΩ 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. 7. Characteristics Table 7: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor Rth(j-a) thermal resistance from junction to ambient in free air SOT363 [1] - - 625 K/W SOT666 [1] [2] - - 625 K/W Per device Rth(j-a) thermal resistance from junction to ambient in free air SOT363 [1] - - 416 K/W SOT666 [1] [2] - - 416 K/W Table 8: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per transistor; for the PNP transistor with negative polarity ICBO collector-base cut-off current VCB =50V; IE = 0 A - - 100 nA ICEO collector-emitter cut-off current VCE =30V; IB =0A - - 1 µA VCE =30V; IB =0A; Tj = 150 °C -- 50 µA IEBO emitter-base cut-off current VEB =5V; IC =0A - - 50 µA hFE DC current gain VCE =5V; IC =5mA 80 - - VCEsat collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA - - 150 mV VI(off) off-state input voltage VCE =5V; IC = 100 µA - 1.1 0.5 V VI(on) on-state input voltage VCE = 0.3 V; IC = 1 mA 3 1.5 - V R1 bias resistor 1 (input) 70 100 130 k Ω R2/R1 bias resistor ratio 0.8 1 1.2 Cc collector capacitance VCB =10V; IE =ie =0A; f = 1 MHz TR1 (NPN) - - 2.5 pF TR2 (PNP) - - 3 pF |
Similar Part No. - PEMD24_PUMD24_15 |
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Similar Description - PEMD24_PUMD24_15 |
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