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PEMB2_PUMB2 Datasheet(PDF) 6 Page - NXP Semiconductors |
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PEMB2_PUMB2 Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 14 page PEMB2_PUMB2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 — 17 November 2011 6 of 14 NXP Semiconductors PEMB2; PUMB2 PNP/PNP resistor-equipped transistors; R1 = 47 k , R2 = 47 k 7. Characteristics [1] Characteristics of built-in transistor Table 8. Characteristics Tamb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per transistor ICBO collector-base cut-off current VCB = 50 V; IE =0A - - 100 nA ICEO collector-emitter cut-off current VCE = 30 V; IB =0A - - 1 A VCE = 30 V; IB =0A; Tj =150 C -- 5 A IEBO emitter-base cut-off current VEB = 5V; IC =0A - - 90 A hFE DC current gain VCE = 5V; IC = 5mA 80 - - VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 mV VI(off) off-state input voltage VCE = 5V; IC = 100 A- 1.2 0.8 V VI(on) on-state input voltage VCE = 0.3 V; IC = 2mA 3 1.6 - V R1 bias resistor 1 (input) 33 47 61 k R2/R1 bias resistor ratio 0.8 1 1.2 Cc collector capacitance VCB = 10 V; IE =ie =0A; f=1MHz -- 3 pF fT transition frequency VCE = 5V; IC = 10 mA; f=100MHz [1] - 180 - MHz |
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