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IRFS7730-7PPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFS7730-7PPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRFS7730-7PPbF 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014 Absolute Maximum Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 269 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 190 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 240 IDM Pulsed Drain Current 990 PD @TC = 25°C Maximum Power Dissipation 375 W Linear Derating Factor 2.5 W/°C VGS Gate-to-Source Voltage ± 20 V TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics Symbol Parameter Max. Units EAS (Thermally limited) Single Pulse Avalanche Energy 464 EAS (Thermally limited) Single Pulse Avalanche Energy 897 IAR Avalanche Current See Fig 15, 16, 23a, 23b A EAR Repetitive Avalanche Energy mJ Thermal Resistance Symbol Parameter Typ. Max. Units RJC Junction-to-Case ––– 0.40 °C/W RJA Junction-to-Ambient ––– 40 mJ Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 40 ––– mV/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 1.70 2.00 m VGS = 10V, ID = 100A VGS(th) Gate Threshold Voltage 2.1 ––– 3.7 V VDS = VGS, ID = 250µA IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 75 V, VGS = 0V ––– ––– 150 VDS = 75V,VGS = 0V,TJ =125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V RG Gate Resistance ––– 1.9 ––– ––– 2.20 ––– m VGS = 6.0V, ID = 50A Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 93µH, RG = 50, IAS = 100A, VGS =10V. ISD 100A, di/dt 1575A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 42A, VGS =10V. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.please refer to application note to AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf |
Similar Part No. - IRFS7730-7PPBF_15 |
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Similar Description - IRFS7730-7PPBF_15 |
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