 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
IRFS7762PBF Datasheet(PDF) 2 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
IRFS7762PBF Datasheet(HTML) 2 Page - International Rectifier |
|
|
2 / 12 page  IRFS/SL7762PbF 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 19, 2015 Absolute Maximum Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 85 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 60 IDM Pulsed Drain Current 335 PD @TC = 25°C Maximum Power Dissipation 140 W Linear Derating Factor 0.95 W/°C VGS Gate-to-Source Voltage ± 20 V TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics Symbol Parameter Max. Units EAS (Thermally limited) Single Pulse Avalanche Energy 160 EAS (Thermally limited) Single Pulse Avalanche Energy 243 IAR Avalanche Current See Fig 15, 16, 23a, 23b A EAR Repetitive Avalanche Energy mJ Thermal Resistance Symbol Parameter Typ. Max. Units RJC Junction-to-Case ––– 1.05 °C/W RJA Junction-to-Ambient (PCB Mount) ––– 40 mJ Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 58 ––– mV/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 5.6 6.7 VGS = 10V, ID = 51A ––– 6.6 ––– VGS = 6.0V, ID = 26A VGS(th) Gate Threshold Voltage 2.1 ––– 3.7 V VDS = VGS, ID = 100µA IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 75V, VGS = 0V ––– ––– 150 VDS = 75V,VGS = 0V,TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V RG Gate Resistance ––– 2.5 ––– m Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 120µH, RG = 50, IAS = 51A, VGS =10V. ISD 51A, di/dt 735A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 22A, VGS =10V. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf |
Similar Part No. - IRFS7762PBF |
|
Similar Description - IRFS7762PBF |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
