IRFZ48VSPbF

07/19/04

Parameter

Max.

Units

72

51

A

Pulsed Drain Current



290

Power Dissipation

150

W

Linear Derating Factor

1.0

W/°C

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy

‚

166

mJ

Avalanche Current



72

A

Repetitive Avalanche Energy



15

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

5.3

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

1.0

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

Junction-to-Ambient

–––

62

Thermal Resistance

www.irf.com

1

S

D

G

utilize advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of applications.

accommodating die sizes up to HEX-4. It provides the highest power

capability and the lowest possible on-resistance in any existing

applications because of its low internal connection resistance and

can dissipate up to 2.0W in a typical surface mount application.

Description

PD - 95573