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FM400CD1D5C Datasheet(PDF) 2 Page - KEC(Korea Electronics)

Part # FM400CD1D5C
Description  2-PACK MOSFET MODULE
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Manufacturer  KEC [KEC(Korea Electronics)]
Direct Link  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

FM400CD1D5C Datasheet(HTML) 2 Page - KEC(Korea Electronics)

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2013. 9. 13
2/3
FM400CD1D5C
Revision No : 0
ELECTRICAL CHARACTERISTICS (@Tc=25
℃ Per Leg, Unless otherwise noted)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
BVDSS
ID=250㎂ , VGS=0V
150
-
-
V
Breakdown Voltage Temperature Coefficient
ΔBV
DSS/ΔTj
ID=5mA, Referenced to 25℃
-
0.17
-
V/
℃
Gate Threshold Voltage
Vth
VDS=VGS, ID=250㎂
3.0
-
5.0
V
Drain to Source Leakage Current
IDSS
VDS=150V, VGS=0V
-
-
80
μA
VDS=150V, VGS=0V, Tj=125℃
-
-
1000
μA
Gate to Source Leakage Current
IGSS
VGS=20V
-
-
400
nA
VGS=-20V
-
-400
nA
Drain to Source ON Resistance
RDS(ON)
VGS=10V, ID=400A
-
2.3
3.2
m
Ω
Dynamic
Total Gate Charge
Qg
ID=400A, VDS=75V, VGS=10V
-
600
-
nC
Gate to Source Charge
Qgs
-
200
-
Gate to Source Charge
Qgd
-
220
-
Turn On Delay Time
td(on)
VDS=75V, ID=400A, RG=3.3Ω↓
-
110
-
ns
Rise Time
tr
-
490
-
Turn Off Delay Tine
td(off)
-
180
-
Fall Time
tr
-
310
-
Input Capacitance
Ciss
VDS=50V, VGS=0V, f=1㎒
-
40
-
Output Capacitance
Coss
-
4
-
Reverse Transfer Capacitance
Crss
-
0.8
-
pF
Source-Drain Diode Ratings
Continuous Source Current
IS
-
-
450
A
Pulsed Source Current
ISP
-
-
2500
A
Diode Forward Voltage
VSD
ID=400A, VGS=0V
-
1.1
1.4
V
Reverse Recovery Time
trr
VR=75V, ID=400A, di/dt = -100A/us
-
TBD
-
ns
Reverse Recovery Charge
Qrr
-
TBD
-
nC


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