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PEMH20_PUMH20 Datasheet(PDF) 3 Page - NXP Semiconductors |
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PEMH20_PUMH20 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 9 page PEMH20_PUMH20_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 15 November 2009 3 of 9 NXP Semiconductors PEMH20; PUMH20 NPN/NPN resistor-equipped transistors; R1 = 2.2 k Ω, R2 = 2.2 kΩ 5. Limiting values [1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 10 V VI input voltage positive - +12 V negative - −10 V IO output current (DC) - 100 mA ICM peak collector current - 100 mA Ptot total power dissipation Tamb ≤ 25 °C SOT363 [1] -200 mW SOT666 [1][2] -200 mW Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Per device Ptot total power dissipation Tamb ≤ 25 °C SOT363 [1] -300 mW SOT666 [1][2] -300 mW |
Similar Part No. - PEMH20_PUMH20_15 |
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Similar Description - PEMH20_PUMH20_15 |
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