IRG4RC10SDPbF

07/04/07

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

E

G

n-channel

C

Standard Speed CoPack

IGBT

• Extremely low voltage drop 1.1V(typ) @ 2A

• S-Series: Minimizes power dissipation at up to 3

KHz PWM frequency in inverter drives, up to 4

KHz in brushless DC drives.

• Tight parameter distribution

ultra-soft-recovery anti-parallel diodes for use

in bridge configurations

• Industry standard TO-252AA package

Benefits

• Generation 4 IGBT's offer highest efficiencies

available

• IGBT's optimized for specific application conditions

• HEXFRED diodes optimized for performance with

IGBT's . Minimized recovery characteristics require

less/no snubbing

• Lower losses than MOSFET's conduction and

Diode losses

D-PAK

TO-252AA

Parameter

Max.

Units

Collector-to-Emitter Voltage

600

V

Continuous Collector Current

14

Continuous Collector Current

8.0

Pulsed Collector Current



18

A

Clamped Inductive Load Current

‚

18

Diode Continuous Forward Current

4.0

Diode Maximum Forward Current

16

Gate-to-Emitter Voltage

± 20

V

Maximum Power Dissipation

38

Maximum Power Dissipation

15

Operating Junction and

-55 to +150

Storage Temperature Range

°C

W

Absolute Maximum Ratings

Thermal Resistance

°C/W

Parameter

Typ.

Max.

Units

Junction-to-Case - IGBT

–––

3.3

Junction-to-Case - Diode

–––

7.0

Junction-to-Ambient (PCB mount)*

–––

50

Wt

Weight

0.3 (0.01)

–––

g (oz)

* When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994

www.irf.com

1

• Lead-Free

PD - 95192A