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TIP115 Datasheet(PDF) 2 Page - ON Semiconductor |
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TIP115 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) www.onsemi.com 2 MAXIMUM RATINGS Rating Symbol TIP110, TIP115 TIP111, TIP116 TIP112, TIP117 Unit Collector−Emitter Voltage VCEO 60 80 100 Vdc Collector−Base Voltage VCB 60 80 100 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector Current − Continuous − Peak IC 2.0 4.0 Adc Base Current IB 50 mAdc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 50 0.4 W W/°C Total Power Dissipation @ TA = 25°C Derate above 25°C PD 2.0 0.016 W W/°C Unclamped Inductive Load Energy − Figure 13 E 25 mJ Operating and Storage Junction TJ, Tstg – 65 to + 150 °C THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 2.5 °C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) TIP110, TIP115 TIP111, TIP116 TIP112, TIP117 VCEO(sus) 60 80 100 − − − Vdc Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP110, TIP115 (VCE = 40 Vdc, IB = 0) TIP111, TIP116 (VCE = 50 Vdc, IB = 0) TIP112 ,TIP117 ICEO − − − 2.0 2.0 2.0 mAdc Collector Cutoff Current (VCB = 60 Vdc, IE = 0) TIP110, TIP115 (VCB = 80 Vdc, IE = 0) TIP111, TIP116 (VCB = 100 Vdc, IE = 0) TIP112, TIP117 ICBO − − − 1.0 1.0 1.0 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 2.0 mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) (IC = 2.0 Adc, VCE = 4.0 Vdc) hFE 1000 500 − − − Collector−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 8.0 mAdc) VCE(sat) − 2.5 Vdc Base−Emitter On Voltage (IC = 2.0 Adc, VCE = 4.0 Vdc) VBE(on) − 2.8 Vdc DYNAMIC CHARACTERISTICS Small−Signal Current Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz) hfe 25 − − Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) TIP115, TIP116, TIP117 TIP110, TIP111, TIP112 Cob − − 200 100 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. |
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