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IRG7PH46UPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRG7PH46UPBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 10 page INSULATED GATE BIPOLAR TRANSISTOR 1 www.irf.com 07/27/12 VCES = 1200V IC = 75A, TC = 100°C TJ(max) =175°C VCE(on) typ. = 1.7V Features • Low VCE (ON) trench IGBT technology • Low switching losses • Maximum junction temperature 175 °C • Square RBSOA • 100% of the parts tested for ILM • Positive VCE (ON) temperature co-efficient • Tight parameter distribution • Lead -Free Benefits • High efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses • Rugged transient performance for increased reliability • Excellent current sharing in parallel operation E C G n-channel G C E Gate Collector Emitter TO-247AC IRG7PH46UPbF TO-247AD IRG7PH46U-EP IRG7PH46UPbF IRG7PH46U-EP Applications • U.P.S • Welding • Solar inverter • Induction heating G C E C Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 1200 V IC @ TC = 25°C Continuous Collector Current (Silicon Limited) 130g IC @ TC = 100°C Continuous Collector Current (Silicon Limited) 75 INOMINAL Nominal Current 40 ICM Pulse Collector Current, VGE = 20V 160 ILM Clamped Inductive Load Current, VGE = 20V c 160 VGE Continuous Gate-to-Emitter Voltage ±30 V PD @ TC = 25°C Maximum Power Dissipation 469 PD @ TC = 100°C Maximum Power Dissipation 234 TJ Operating Junction and -55 to +175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Thermal Resistance Parameter Min. Typ. Max. Units RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-247AC f ––– ––– 0.32 RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) f ––– 0.24 ––– RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 ––– A W °C/W C G C E PD - 96305A |
Similar Part No. - IRG7PH46UPBF_15 |
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Similar Description - IRG7PH46UPBF_15 |
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