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IRG7PSH50UDPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRG7PSH50UDPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRG7PSH50UDPbF 2 www.irf.com Notes: VCC = 80% (VCES), VGE = 20V, L = 200µH, RG = 5.0Ω. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V (BR)CES safely. Rθ is measured at TJ of approximately 90°C. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 100µA e ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 1.0 — V/°C VGE = 0V, IC = 1.0mA (25°C-150°C) VCE(on) Collector-to-Emitter Saturation Voltage — 1.7 2.0 IC = 50A, VGE = 15V, TJ = 25°C —2.0 — V IC = 50A, VGE = 15V, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 V VCE = VGE, IC = 2.0mA ∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -17 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 150°C) gfe Forward Transconductance — 55 — S VCE = 50V, IC = 50A, PW = 30µs ICES Collector-to-Emitter Leakage Current — 2.0 100 µA VGE = 0V, VCE = 1200V —3700 — VGE = 0V, VCE = 1200V, TJ = 150°C VFM Diode Forward Voltage Drop — 3.0 3.9 V IF = 50A —2.7 — IF = 50A, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±200 nA VGE = ±30V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge (turn-on) — 290 440 IC = 50A Qge Gate-to-Emitter Charge (turn-on) — 40 60 nC VGE = 15V Qgc Gate-to-Collector Charge (turn-on) — 110 170 VCC = 600V Eon Turn-On Switching Loss — 3600 4600 IC = 50A, VCC = 600V, VGE = 15V Eoff Turn-Off Switching Loss — 2200 3200 µJ RG = 5.0 Ω, L = 200µH,TJ = 25°C Etotal Total Switching Loss — 5800 7800 Energy losses include tail & diode reverse recovery td(on) Turn-On delay time — 35 55 tr Rise time — 4060ns td(off) Turn-Off delay time — 430 500 tf Fall time — 45 65 Eon Turn-On Switching Loss — 5080 — IC = 50A, VCC = 600V, VGE=15V Eoff Turn-Off Switching Loss — 3370 — µJ RG=5.0 Ω, L=200µH, TJ = 150°C eà Etotal Total Switching Loss — 8450 — Energy losses include tail & diode reverse recovery td(on) Turn-On delay time — 30 — tr Rise time — 40 — ns td(off) Turn-Off delay time — 480 — tf Fall time — 170 — Cies Input Capacitance — 6000 — pF VGE = 0V Coes Output Capacitance — 300 — VCC = 30V Cres Reverse Transfer Capacitance — 130 — f = 1.0Mhz TJ = 150°C, IC = 200A RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 960V, Vp =1200V Rg = 5.0 Ω, VGE = +20V to 0V Erec Reverse Recovery Energy of the Diode — 1510 — µJ TJ = 150°C trr Diode Reverse Recovery Time — 190 — ns VCC = 600V, IF = 5.0A Irr Peak Reverse Recovery Current — 5760 — A Rg = 5.0 Ω, L =1.0mH Conditions |
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