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IRG8P50N120KDPBF Datasheet(PDF) 4 Page - International Rectifier

Part # IRG8P50N120KDPBF
Description  Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG8P50N120KDPBF Datasheet(HTML) 4 Page - International Rectifier

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IRG8P50N120KDPbF/IRG8P50N120KD-EPbF
4
www.irf.com
© 2014 International Rectifier
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October 30, 2014
0
50
100
150
200
250
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VCES = 600V
VCES = 400V
4
6
8
10
12
14
16
VGE (V)
0.1
1
10
100
1000
TJ = -40°C
TJ = 25°C
TJ = 150°C
0
10
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30
40
50
60
70
IC (A)
1
10
100
1000
tR
tdON
tF
tdOFF
Fig. 7 - Typical Gate Charge vs. VGE
ICE = 35A
3
6
9
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15
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21
24
27
RG ()
10
100
1000
tR
tdON
tF
tdOFF
Fig. 11 - Typ. Switching Time vs. RG
TJ = 150°C; VCE = 600V, ICE = 35A; VGE = 15V
Fig. 9 - Typ. Switching Time vs. IC
TJ = 150°C; VCE = 600V, RG = 5.0; VGE = 15V
0
1020
30
405060
70
IC (A)
0
2
4
6
8
10
12
14
EOFF @ Tj = 150°C
EON @ Tj = 150°C
ERR @ Tj = 150°C
EOFF @ Tj = 25°C
EON @ Tj = 25°C
ERR @ Tj = 25°C
Fig. 6 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
5
7
9 11 13 15 17 19 21 23 25 27
Rg ()
0
1
2
3
4
5
6
7
8
9
10
EON @ Tj = 150°C
EOFF @ Tj = 150°C
ERR @ Tj = 150°C
EON @ Tj = 25°C
EOFF @ Tj = 25°C
ERR @ Tj = 25°C
Fig. 8 - Typ. Energy Loss vs. IC
VCE = 600V, RG = 5.0; VGE = 15V
Fig. 10 - Typ. Energy Loss vs. RG
VCE = 600V, ICE = 35A; VGE = 15V


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