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Product data sheet

Rev. 06 — 4 April 2005

3 of 8

Philips Semiconductors

1PSxSB17

6.

Thermal characteristics

[1]

For Schottky barrier diodes, thermal run-away has to be considered as in some applications the reverse

[2]

Refer to SOD323 (SC-76) standard mounting conditions.

[3]

Refer to SOD523 (SC-79) standard mounting conditions.

[4]

Refer to SOT666 standard mounting conditions.

7.

Characteristics

[1]

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C

Table 6:

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

Table 7:

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from junction to

ambient;

in free air

[1]

SOD323

[2] -

-

450

K/W

SOD523

[3] -

-

450

K/W

SOT666

[4] -

-

700

K/W

Table 8:

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

forward voltage

see Figure 1;

[1]

-

300

350

mV

-

360

450

mV

-

470

600

mV

reverse current

-

-

250

nA

diode

capacitance

see Figure 3;

-

0.8

1

pF

-

0.65

-

pF