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IRGP4063D1PBF Datasheet(PDF) 4 Page - International Rectifier

Part # IRGP4063D1PBF
Description  Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRGP4063D1PBF Datasheet(HTML) 4 Page - International Rectifier

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IRGP4063D1PbF/IRGP4063D1-EPbF
4
www.irf.com
© 2013 International Rectifier
June 24, 2013
0
2
4
6
8
10
VCE (V)
0
50
100
150
200
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
0
2
4
6
8
10
VCE (V)
0
50
100
150
200
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
0
2
4
6
8
10
VCE (V)
0
50
100
150
200
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VF (V)
0
50
100
150
200
TJ =175°C
TJ = 25°C
TJ = -40°C
6
8
10
12
14
16
18
20
VGE (V)
0
2
4
6
8
ICE = 24A
ICE = 48A
ICE = 96A
Fig. 8 - Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 20µs
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
6
8
10
12
14
16
18
20
VGE (V)
0
2
4
6
8
ICE = 24A
ICE = 48A
ICE = 96A
Fig. 9 - Typ. Diode Forward Characteristics
tp = 20µs
Fig. 111 - Typical VCE vs. VGE
TJ = 25°C


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