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IRGP4069PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRGP4069PBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 10 page IRGP4069PbF/IRGP4069-EPbF 2 www.irf.com Notes: VCC = 80% (VCES), VGE = 20V, L = 19μH, RG = 10Ω. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V (BR)CES safely. Rθ is measured at T J of approximately 90°C. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ——V VGE = 0V, IC = 100μA e ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage —1.3 — mV/°C VGE = 0V, IC = 1mA (25°C-175°C) — 1.6 1.85 IC = 35A, VGE = 15V, TJ = 25°C d VCE(on) Collector-to-Emitter Saturation Voltage — 1.9 — V IC = 35A, VGE = 15V, TJ = 150°C d —2.0 — IC = 35A, VGE = 15V, TJ = 175°C d VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 1.0mA ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient — -18 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) gfe Forward Transconductance — 25 — S VCE = 50V, IC = 35A, PW = 60μs ICES Collector-to-Emitter Leakage Current — 1.0 20 μA VGE = 0V, VCE = 600V — 770 — VGE = 0V, VCE = 600V, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge (turn-on) — 69 104 IC = 35A Qge Gate-to-Emitter Charge (turn-on) — 18 27 nC VGE = 15V Qgc Gate-to-Collector Charge (turn-on) — 29 44 VCC = 400V Eon Turn-On Switching Loss — 390 508 IC = 35A, VCC = 400V, VGE = 15V Eoff Turn-Off Switching Loss — 632 753 μJ RG = 10 Ω, L = 200μH, LS = 150nH, TJ = 25°C Etotal Total Switching Loss — 1022 1261 Energy losses include tail & diode reverse recovery td(on) Turn-On delay time — 46 56 IC = 35A, VCC = 400V, VGE = 15V tr Rise time — 33 42 ns RG = 10 Ω, L = 200μH, LS = 150nH, TJ = 25°C td(off) Turn-Off delay time — 105 117 tf Fall time — 44 54 Eon Turn-On Switching Loss — 1013 — IC = 35A, VCC = 400V, VGE=15V Eoff Turn-Off Switching Loss — 929 — μJ RG=10 Ω, L=200μH, LS=150nH, TJ = 175°C Etotal Total Switching Loss — 1942 — Energy losses include tail & diode reverse recovery td(on) Turn-On delay time — 43 — IC = 35A, VCC = 400V, VGE = 15V tr Rise time — 35 — ns RG = 10 Ω, L = 200μH, LS = 150nH td(off) Turn-Off delay time — 127 — TJ = 175°C tf Fall time — 61 — Cies Input Capacitance — 2113 — pF VGE = 0V Coes Output Capacitance — 197 — VCC = 30V Cres Reverse Transfer Capacitance — 65 — f = 1.0Mhz TJ = 175°C, IC = 140A RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V Rg = 10 Ω, VGE = +20V to 0V SCSOA Short Circuit Safe Operating Area 5 — — μs VCC = 400V, Vp =600V Rg = 10 Ω, VGE = +15V to 0V Conditions |
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