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IRGP4069PBF Datasheet(PDF) 2 Page - International Rectifier

Part # IRGP4069PBF
Description  INSULATED GATE BIPOLAR TRANSISTOR
Download  10 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRGP4069PBF Datasheet(HTML) 2 Page - International Rectifier

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IRGP4069PbF/IRGP4069-EPbF
2
www.irf.com
Notes:
 VCC = 80% (VCES), VGE = 20V, L = 19μH, RG = 10Ω.
‚ Pulse width limited by max. junction temperature.
ƒ Refer to AN-1086 for guidelines for measuring V
(BR)CES safely.
„ Rθ is measured at T
J of approximately 90°C.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
——V
VGE = 0V, IC = 100μA e
ΔV(BR)CES/ΔTJ
Temperature Coeff. of Breakdown Voltage
—1.3
mV/°C VGE = 0V, IC = 1mA (25°C-175°C)
1.6
1.85
IC = 35A, VGE = 15V, TJ = 25°C d
VCE(on)
Collector-to-Emitter Saturation Voltage
1.9
V
IC = 35A, VGE = 15V, TJ = 150°C
d
—2.0
IC = 35A, VGE = 15V, TJ = 175°C d
VGE(th)
Gate Threshold Voltage
4.0
6.5
V
VCE = VGE, IC = 1.0mA
ΔVGE(th)/ΔTJ
Threshold Voltage temp. coefficient
-18
mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C)
gfe
Forward Transconductance
25
S
VCE = 50V, IC = 35A, PW = 60μs
ICES
Collector-to-Emitter Leakage Current
1.0
20
μA
VGE = 0V, VCE = 600V
770
VGE = 0V, VCE = 600V, TJ = 175°C
IGES
Gate-to-Emitter Leakage Current
±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Qg
Total Gate Charge (turn-on)
69
104
IC = 35A
Qge
Gate-to-Emitter Charge (turn-on)
18
27
nC
VGE = 15V
Qgc
Gate-to-Collector Charge (turn-on)
29
44
VCC = 400V
Eon
Turn-On Switching Loss
390
508
IC = 35A, VCC = 400V, VGE = 15V
Eoff
Turn-Off Switching Loss
632
753
μJ
RG = 10
Ω, L = 200μH, LS = 150nH, TJ = 25°C
Etotal
Total Switching Loss
1022
1261
Energy losses include tail & diode reverse recovery
td(on)
Turn-On delay time
46
56
IC = 35A, VCC = 400V, VGE = 15V
tr
Rise time
33
42
ns
RG = 10
Ω, L = 200μH, LS = 150nH, TJ = 25°C
td(off)
Turn-Off delay time
105
117
tf
Fall time
44
54
Eon
Turn-On Switching Loss
1013
IC = 35A, VCC = 400V, VGE=15V
Eoff
Turn-Off Switching Loss
929
μJ
RG=10
Ω, L=200μH, LS=150nH, TJ = 175°C
Etotal
Total Switching Loss
1942
Energy losses include tail & diode reverse recovery
td(on)
Turn-On delay time
43
IC = 35A, VCC = 400V, VGE = 15V
tr
Rise time
35
ns
RG = 10
Ω, L = 200μH, LS = 150nH
td(off)
Turn-Off delay time
127
TJ = 175°C
tf
Fall time
61
Cies
Input Capacitance
2113
pF
VGE = 0V
Coes
Output Capacitance
197
VCC = 30V
Cres
Reverse Transfer Capacitance
65
f = 1.0Mhz
TJ = 175°C, IC = 140A
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 480V, Vp =600V
Rg = 10
Ω, VGE = +20V to 0V
SCSOA
Short Circuit Safe Operating Area
5
μs
VCC = 400V, Vp =600V
Rg = 10
Ω, VGE = +15V to 0V
Conditions


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