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IRL2203NSPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRL2203NSPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRL2203NS/LPbF 2 www.irf.com Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 0.16mH RG = 25Ω, IAS = 60A, VGS=10V (See Figure 12) ISD ≤ 60A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 400µs; duty cycle ≤ 2%. Notes:
This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175°C . Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Rθ is measured at TJ approximately 90°C Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min Typ Max Units V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– ––– 7.0 ––– ––– 10 VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V gfs Forward Transconductance 73 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 25 ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 Qg Total Gate Charge ––– ––– 60 Qgs Gate-to-Source Charge ––– ––– 14 Qgd Gate-to-Drain ("Miller") Charge ––– ––– 33 RG Gate Resistance 0.2 ––– 3.0 Ω td(on) Turn-On Delay Time ––– 11 ––– tr Rise Time ––– 160 ––– td(off) Turn-Off Delay Time ––– 23 ––– tf Fall Time ––– 66 ––– Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 3290 ––– Coss Output Capacitance ––– 1270 ––– Crss Reverse Transfer Capacitance ––– 170 ––– EAS Single Pulse Avalanche Energy d ––– 1320 g 290 h mJ Source-Drain Ratings and Characteristics Symbol Parameter Min Typ Max Units IS Continuous Source Current (Body Diode) A ISM Pulsed Source Current (Body Diode)Ã VSD Diode Forward Voltage ––– ––– 1.2 V trr Reverse Recovery Time ––– 56 84 ns Qrr Reverse Recovery Charge ––– 110 170 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) di/dt = 100A/µs f Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VDS = VGS, ID = 250µA VDS = 30V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C IAS = 60A, L = 0.16mH VGS = 4.5V, See Fig. 6 and 13 integral reverse p-n junction diode. TJ = 25°C, IS = 60A, VGS = 0V f TJ = 25°C, IF = 60A VGS = 16V VGS = -16V MOSFET symbol showing the VDD = 15V ID = 60A RG = 1.8Ω ID = 60A VDS = 24V Conditions VGS = 4.5V, See Fig. 10 f VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 µA VDS = 25V, ID = 60A f VGS = 10V, ID = 60A f VGS = 4.5V, ID = 48A f ––– 116 i nA nC Nh pF ––– ––– 400 Internal Drain Inductance Internal Source Inductance 4.5 ––– 7.5 ––– ––– LD LS ––– ––– |
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